·
Engenharia Elétrica ·
Eletrônica de Potência
Send your question to AI and receive an answer instantly
Recommended for you
11
Prova Eletronica de Potencia - Analise de Datasheet Diodo IDP45E60
Eletrônica de Potência
UP
5
Lista de Exercícios Resolvidos - Retificadores a Tiristor - Eletrônica de Potência
Eletrônica de Potência
UP
3
Lista de Exercícios Resolvidos - Gradadores Monofásicos em Eletrônica de Potência
Eletrônica de Potência
UP
2
Lista de Exercicios Conversores CCCC - Eletronica de Potencia
Eletrônica de Potência
UP
10
Lista de Exercícios Resolvidos Retificadores Trifásicos a Tiristor - Eletrônica de Potência
Eletrônica de Potência
UP
Preview text
20030731 Rev2 Page 1 IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF 45 A VF 15 V Tjmax 175 C Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175C operating temperature Easy paralleling PTO2203SMD PTO22022 Pin 1 PIN 2 PIN 3 C A NC C A Marking D45E60 D45E60 Type Package Ordering Code IDP45E60 PTO22022 Q67040S4469 IDB45E60 PTO2203SMD Q67040S4375 Maximum Ratings at Tj 25 C unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC25C TC90C IF 71 47 A Surge non repetitive forward current TC25C tp10 ms sine halfwave IFSM 162 Maximum repetitive forward current TC25C tp limited by Tjmax D05 IFRM 1115 Power dissipation TC25C TC90C Ptot 187 106 W Operating and storage temperature Tj Tstg 55175 C Soldering temperature 16mm0063 in from case for 10s TS 255 C 20030731 Rev2 Page 2 IDP45E60 IDB45E60 Thermal Characteristics Parameter Symbol Values Unit min typ max Characteristics Thermal resistance junction case RthJC 08 KW Thermal resistance junction ambient leaded RthJA 62 SMD version device on PCB min footprint 6 cm2 cooling area 1 RthJA 35 62 Electrical Characteristics at Tj 25 C unless otherwise specified Parameter Symbol Values Unit min typ max Static Characteristics Reverse leakage current VR600V Tj25C VR600V Tj150C IR 50 3000 µA Forward voltage drop IF45A Tj25C IF45A Tj150C VF 15 15 2 V 1Device on 40mm40mm15mm epoxy PCB FR4 with 6cm² one layer 70 µm thick copper area for drain connection PCB is vertical without blown air 20030731 Rev2 Page 3 IDP45E60 IDB45E60 Electrical Characteristics at Tj 25 C unless otherwise specified Parameter Symbol Values Unit min typ max Dynamic Characteristics Reverse recovery time VR400V IF45A diFdt1000Aµs Tj25C VR400V IF45A diFdt1000Aµs Tj125C VR400V IF45A diFdt1000Aµs Tj150C trr 140 185 195 ns Peak reverse current VR400V IF 45A diFdt1000Aµs Tj25C VR400V IF 45A diFdt1000Aµs Tj125C VR400V IF 45A diFdt1000Aµs Tj150C Irrm 23 281 29 A Reverse recovery charge VR400V IF45A diFdt1000Aµs Tj25C VR400V IF 45A diFdt1000Aµs Tj125C VR400V IF 45A diFdt1000Aµs Tj150C Qrr 1400 2650 2900 nC Reverse recovery softness factor VR400V IF45A diFdt1000Aµs Tj25C VR400V IF45A diFdt1000Aµs Tj125C VR400V IF45A diFdt1000Aµs Tj150C S 31 42 44 20030731 Rev2 Page 4 IDP45E60 IDB45E60 2 Diode forward current IF fTC parameter Tj 175C 25 50 75 100 125 C 175 TC 0 10 20 30 40 50 60 A 80 IF 1 Power dissipation Ptot f TC parameter Tj 175 C 25 50 75 100 125 C 175 TC 0 15 30 45 60 75 90 105 120 135 150 165 W 195 Ptot 3 Typ diode forward current IF f VF 0 05 1 15 V 25 VF 0 20 40 60 80 100 A 140 IF 55C 25C 100C 150C 4 Typ diode forward voltage VF f Tj 60 20 20 60 100 C 160 Tj 1 12 14 16 18 2 V 24 VF 225A 45A 90A 20030731 Rev2 Page 5 IDP45E60 IDB45E60 5 Typ reverse recovery time trr f diFdt parameter VR 400V Tj 125C 200 300 400 500 600 700 800 Aµs 1000 diFdt 100 150 200 250 300 350 ns 450 trr 90A 45A 225A 6 Typ reverse recovery charge QrrfdiFdt parameter VR 400V Tj 125 C 200 300 400 500 600 700 800 Aµs 1000 diFdt 1000 1500 2000 2500 3000 nC 4000 Qrr 45A 90A 225A 7 Typ reverse recovery current Irr f diFdt parameter VR 400V Tj 125C 200 300 400 500 600 700 800 Aµs 1000 diFdt 5 10 15 20 25 A 35 Irr 90A 45A 225A 8 Typ reverse recovery softness factor S fdiFdt parameter VR 400V Tj 125C 200 300 400 500 600 700 800 Aµs 1000 diFdt 3 35 4 45 5 55 6 65 7 8 S 225A 45A 90A 20030731 Rev2 Page 6 IDP45E60 IDB45E60 9 Max transient thermal impedance ZthJC f tp parameter D tpT 10 7 10 6 10 5 10 4 10 3 10 2 10 0 s tp 4 10 3 10 2 10 1 10 0 10 1 10 KW IDP45E60 ZthJC single pulse 001 002 005 010 020 D 050 20030731 Rev2 Page 7 IDP45E60 IDB45E60 TO22022 symbol mm inch min max min max A 970 1010 03819 03976 B 1530 1590 06024 06260 C 065 085 00256 00335 D 355 385 01398 01516 E 260 300 01024 01181 F 900 940 03543 03701 G 1300 1400 05118 05512 H 1720 1780 06772 07008 J 440 480 01732 01890 K 040 060 00157 00236 L M N P 110 140 00433 00551 T U V W X 000 040 00000 00157 026 typ 66 typ 051 typ 130 typ 75 typ 0295 typ 24 typ 0095 typ 44 typ 0173 typ 254 typ 01 typ dimensions 041 typ 105 typ A U V W G M T J F L X P D C K N B H E 20030731 Rev2 Page 8 IDP45E60 IDB45E60 symbol mm inch min max min max A 980 1000 03858 03937 B C 125 175 00492 00689 D 095 115 00374 00453 E F 072 085 00283 00335 G H 430 450 01693 01772 K 128 140 00504 00551 L 900 940 03543 03701 M 230 250 00906 00984 N P 000 020 00000 00079 Q 330 390 01299 01535 R S 170 250 00669 00984 T 050 065 00197 00256 U V W X Y Z 940 typ 03701 typ 1615 typ 06358 typ 643 typ 02532 typ 460 typ 01811 typ 108 typ 04252 typ 135 typ 00532 typ 141 typ 05551 typ 8 max 8 max dimensions 254 typ 01 typ 508 typ 02 typ 13 typ 00512 typ TO220345 PTO220SMD 20030731 Rev2 Page 9 IDP45E60 IDB45E60 Published by Infineon Technologies AG Bereichs Kommunikation StMartinStrasse 53 D81541 München Infineon Technologies AG 1999 All Rights Reserved Attention please The information herein is given to describe certain components and shall not be considered as warranted characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of noninfringement regarding circuits descriptions and charts stated herein Infineon Technologies is an approved CECC manufacturer Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide see address list Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support andor maintain and sustain andor protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered This datasheet has been download from wwwdatasheetcatalogcom Datasheets for electronics components
Send your question to AI and receive an answer instantly
Recommended for you
11
Prova Eletronica de Potencia - Analise de Datasheet Diodo IDP45E60
Eletrônica de Potência
UP
5
Lista de Exercícios Resolvidos - Retificadores a Tiristor - Eletrônica de Potência
Eletrônica de Potência
UP
3
Lista de Exercícios Resolvidos - Gradadores Monofásicos em Eletrônica de Potência
Eletrônica de Potência
UP
2
Lista de Exercicios Conversores CCCC - Eletronica de Potencia
Eletrônica de Potência
UP
10
Lista de Exercícios Resolvidos Retificadores Trifásicos a Tiristor - Eletrônica de Potência
Eletrônica de Potência
UP
Preview text
20030731 Rev2 Page 1 IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF 45 A VF 15 V Tjmax 175 C Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175C operating temperature Easy paralleling PTO2203SMD PTO22022 Pin 1 PIN 2 PIN 3 C A NC C A Marking D45E60 D45E60 Type Package Ordering Code IDP45E60 PTO22022 Q67040S4469 IDB45E60 PTO2203SMD Q67040S4375 Maximum Ratings at Tj 25 C unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC25C TC90C IF 71 47 A Surge non repetitive forward current TC25C tp10 ms sine halfwave IFSM 162 Maximum repetitive forward current TC25C tp limited by Tjmax D05 IFRM 1115 Power dissipation TC25C TC90C Ptot 187 106 W Operating and storage temperature Tj Tstg 55175 C Soldering temperature 16mm0063 in from case for 10s TS 255 C 20030731 Rev2 Page 2 IDP45E60 IDB45E60 Thermal Characteristics Parameter Symbol Values Unit min typ max Characteristics Thermal resistance junction case RthJC 08 KW Thermal resistance junction ambient leaded RthJA 62 SMD version device on PCB min footprint 6 cm2 cooling area 1 RthJA 35 62 Electrical Characteristics at Tj 25 C unless otherwise specified Parameter Symbol Values Unit min typ max Static Characteristics Reverse leakage current VR600V Tj25C VR600V Tj150C IR 50 3000 µA Forward voltage drop IF45A Tj25C IF45A Tj150C VF 15 15 2 V 1Device on 40mm40mm15mm epoxy PCB FR4 with 6cm² one layer 70 µm thick copper area for drain connection PCB is vertical without blown air 20030731 Rev2 Page 3 IDP45E60 IDB45E60 Electrical Characteristics at Tj 25 C unless otherwise specified Parameter Symbol Values Unit min typ max Dynamic Characteristics Reverse recovery time VR400V IF45A diFdt1000Aµs Tj25C VR400V IF45A diFdt1000Aµs Tj125C VR400V IF45A diFdt1000Aµs Tj150C trr 140 185 195 ns Peak reverse current VR400V IF 45A diFdt1000Aµs Tj25C VR400V IF 45A diFdt1000Aµs Tj125C VR400V IF 45A diFdt1000Aµs Tj150C Irrm 23 281 29 A Reverse recovery charge VR400V IF45A diFdt1000Aµs Tj25C VR400V IF 45A diFdt1000Aµs Tj125C VR400V IF 45A diFdt1000Aµs Tj150C Qrr 1400 2650 2900 nC Reverse recovery softness factor VR400V IF45A diFdt1000Aµs Tj25C VR400V IF45A diFdt1000Aµs Tj125C VR400V IF45A diFdt1000Aµs Tj150C S 31 42 44 20030731 Rev2 Page 4 IDP45E60 IDB45E60 2 Diode forward current IF fTC parameter Tj 175C 25 50 75 100 125 C 175 TC 0 10 20 30 40 50 60 A 80 IF 1 Power dissipation Ptot f TC parameter Tj 175 C 25 50 75 100 125 C 175 TC 0 15 30 45 60 75 90 105 120 135 150 165 W 195 Ptot 3 Typ diode forward current IF f VF 0 05 1 15 V 25 VF 0 20 40 60 80 100 A 140 IF 55C 25C 100C 150C 4 Typ diode forward voltage VF f Tj 60 20 20 60 100 C 160 Tj 1 12 14 16 18 2 V 24 VF 225A 45A 90A 20030731 Rev2 Page 5 IDP45E60 IDB45E60 5 Typ reverse recovery time trr f diFdt parameter VR 400V Tj 125C 200 300 400 500 600 700 800 Aµs 1000 diFdt 100 150 200 250 300 350 ns 450 trr 90A 45A 225A 6 Typ reverse recovery charge QrrfdiFdt parameter VR 400V Tj 125 C 200 300 400 500 600 700 800 Aµs 1000 diFdt 1000 1500 2000 2500 3000 nC 4000 Qrr 45A 90A 225A 7 Typ reverse recovery current Irr f diFdt parameter VR 400V Tj 125C 200 300 400 500 600 700 800 Aµs 1000 diFdt 5 10 15 20 25 A 35 Irr 90A 45A 225A 8 Typ reverse recovery softness factor S fdiFdt parameter VR 400V Tj 125C 200 300 400 500 600 700 800 Aµs 1000 diFdt 3 35 4 45 5 55 6 65 7 8 S 225A 45A 90A 20030731 Rev2 Page 6 IDP45E60 IDB45E60 9 Max transient thermal impedance ZthJC f tp parameter D tpT 10 7 10 6 10 5 10 4 10 3 10 2 10 0 s tp 4 10 3 10 2 10 1 10 0 10 1 10 KW IDP45E60 ZthJC single pulse 001 002 005 010 020 D 050 20030731 Rev2 Page 7 IDP45E60 IDB45E60 TO22022 symbol mm inch min max min max A 970 1010 03819 03976 B 1530 1590 06024 06260 C 065 085 00256 00335 D 355 385 01398 01516 E 260 300 01024 01181 F 900 940 03543 03701 G 1300 1400 05118 05512 H 1720 1780 06772 07008 J 440 480 01732 01890 K 040 060 00157 00236 L M N P 110 140 00433 00551 T U V W X 000 040 00000 00157 026 typ 66 typ 051 typ 130 typ 75 typ 0295 typ 24 typ 0095 typ 44 typ 0173 typ 254 typ 01 typ dimensions 041 typ 105 typ A U V W G M T J F L X P D C K N B H E 20030731 Rev2 Page 8 IDP45E60 IDB45E60 symbol mm inch min max min max A 980 1000 03858 03937 B C 125 175 00492 00689 D 095 115 00374 00453 E F 072 085 00283 00335 G H 430 450 01693 01772 K 128 140 00504 00551 L 900 940 03543 03701 M 230 250 00906 00984 N P 000 020 00000 00079 Q 330 390 01299 01535 R S 170 250 00669 00984 T 050 065 00197 00256 U V W X Y Z 940 typ 03701 typ 1615 typ 06358 typ 643 typ 02532 typ 460 typ 01811 typ 108 typ 04252 typ 135 typ 00532 typ 141 typ 05551 typ 8 max 8 max dimensions 254 typ 01 typ 508 typ 02 typ 13 typ 00512 typ TO220345 PTO220SMD 20030731 Rev2 Page 9 IDP45E60 IDB45E60 Published by Infineon Technologies AG Bereichs Kommunikation StMartinStrasse 53 D81541 München Infineon Technologies AG 1999 All Rights Reserved Attention please The information herein is given to describe certain components and shall not be considered as warranted characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of noninfringement regarding circuits descriptions and charts stated herein Infineon Technologies is an approved CECC manufacturer Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide see address list Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support andor maintain and sustain andor protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered This datasheet has been download from wwwdatasheetcatalogcom Datasheets for electronics components